The storage capacity (density) of DRAM is inversely proportional to the cell geometry. In other words, storage density increases as cell geometry shrinks. Over the past few years, improvements in DRAM storage density have increased capacity from almost 1 kilobit (Kb) per chip to 2 gigabit (Gb) per chip. In the near future, it is expected that capacity will increase even further to 4 Gb per chip.
The industry-standard operating voltage for computer memory components was originally 5 volts. However, as cell geometries decreased, memory circuitry became smaller and more sensitive. Likewise, the industry-standard operating voltage decreased. Today, computer memory components operate at 1.8 volts, which allows them to run faster and consume less power.
Information porvided by Hewlett-Packard Development Company, L.P. _________________ MemoryToday.com โทร.02-641-0055 / 084-959-9000
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